Title :
1.8 GHz class E power amplifier for wireless communications
Author :
Sowlati, T. ; Greshishchev, Y. ; Andre, C. ; Salama, T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fDate :
9/26/1996 12:00:00 AM
Abstract :
The authors present a 1.8 GHz class E power amplifier for wireless communications. A fully integrated class E power amplifier module was designed, fabricated and tested. The circuit was implemented in a self-aligned-gate, depletion mode 0.8 μm GaAs MESFET process. The amplifier delivers 23 dBm of power to the 50Ω load, with a power added efficiency of 57% at a supply voltage of 2.4 V
Keywords :
III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; UHF power amplifiers; gallium arsenide; mobile radio; transceivers; 0.8 micron; 1.8 GHz; 2.4 V; 57 percent; GaAs; UHF IC; class E power amplifier; depletion mode MESFET process; power amplifier module; self-aligned-gate process; wireless communications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961262
