Title :
Low power data decision IC for 20-40 Gbit/s data links using 0.2 μm AlGaAs/GaAs HEMTs
Author :
Wang, Z.G. ; Berroth, M. ; Thiede, A. ; Rieger-Motzer, M. ; Hofmann, P. ; Hülsmann, A. ; Kaufel, G. ; Köhler, K. ; Raynor, B. ; Schmeider, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
fDate :
9/26/1996 12:00:00 AM
Abstract :
A decision IC for optical data links at bit rates of 20-40 Gbit/s has been realised by using 0.2 μm AlGaAs/GaAs HEMT technology and tested on-wafer at bit rates up to 25 Gbit/s. The IC can be operated with a supply from ~3.3 to 5.2 V and a DC current of ~50 mA
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; data communication equipment; digital communication; field effect digital integrated circuits; gallium arsenide; optical communication equipment; optical fibre communication; 0.2 micron; 20 to 40 Gbit/s; 3.3 to 5.2 V; 50 mA; AlGaAs-GaAs; Gbit/s data links; HEMT IC; low power data decision IC; optical data links;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961241
