Title :
Monolithic integration of 1.3-/spl mu/m Stark-ladder electroabsorption waveguide modulators with multimode-interference splitters
Author :
Harrison, Lorna J. ; Tayag, Tristan J. ; Simonis, George J. ; Stead, Michael ; Euliss, Gary W. ; Leavitt, Richard P.
Author_Institution :
Army Res. Lab., Adelphi, MD, USA
fDate :
6/1/2000 12:00:00 AM
Abstract :
In this letter, we describe a novel fabrication process for the monolithic integration of a waveguide power splitter based on the multimode-interference effect with multiple-quantum well (MQW) electroabsorption modulators based on the Stark-ladder effect. The integrated device is fabricated by a one-step epitaxy process using molecular-beam-epitaxy growth and three lithographic steps that eliminates the need for aligned regrowth of the MQW modulator. Experimental results of the modulation depth and wavelength dependence are also reported.
Keywords :
electro-optical modulation; electroabsorption; integrated optoelectronics; molecular beam epitaxial growth; optical beam splitters; optical communication equipment; optical fabrication; photolithography; semiconductor quantum wells; 1.3 mum; 1.3-/spl mu/m Stark-ladder electroabsorption waveguide modulators; MQW electroabsorption modulators; MQW modulator; Stark-ladder effect; fabrication process; integrated device; lithographic steps; modulation depth; molecular-beam-epitaxy growth; monolithic integration; multimode-interference effect; multimode-interference splitters; one-step epitaxy process; waveguide power splitter; wavelength dependence; Absorption; Etching; Integrated optics; Monolithic integrated circuits; Optical beams; Optical modulation; Optical waveguides; Photonic band gap; Propagation losses; Quantum well devices;
Journal_Title :
Photonics Technology Letters, IEEE
