CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

Author

Dainesi, P. ; Küng, A. ; Chabloz, M. ; Lagos, A. ; Flückiger, Ph ; Ionescu, A. ; Fazan, P. ; Declerq, M. ; Renaud, Ph ; Robert, Ph.

Author_Institution

Lab. de Metrol., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

12

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

660

Lastpage

662

Abstract

We present a fully integrated Mach-Zehnder interferometer in silicon-on-insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative design makes this device completely compatible with CMOS technology allowing electronic functions to be integrated on the same substrate. Measurement results, limitations due to thermooptic effect and absorption related to charge injection together with further improvements are discussed.

Keywords

CMOS integrated circuits; Mach-Zehnder interferometers; electro-optical modulation; integrated optoelectronics; refractive index; silicon-on-insulator; thermo-optical effects; 10 MHz; CMOS compatible fully integrated Mach-Zehnder interferometer; CMOS technology; SOI technology; absorption; charge injection; electronic functions; index of refraction modulation; innovative design; plasma dispersion effect; silicon-on-insulator technology; substrate; thermooptic effect; Absorption; Bandwidth; CMOS technology; Charge measurement; Current measurement; Dispersion; Plasma devices; Plasma measurements; Silicon on insulator technology; Thermooptic effects;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.849076

Filename

849076