Type-II superlattice photodetector on a compliant GaAs substrate

Author

Brown, G.J. ; Szmulowicz, F. ; Linville, R. ; Saxler, A. ; Mahalingham, K. ; Chih-Hsiang Lin ; Kuo, C.H. ; Hwang, W.Y.

Author_Institution

Res. Lab., Wright-Patterson AFB, OH, USA

Volume

12

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

684

Lastpage

686

Abstract

A type-II superlattice (SL) of InAs-InGaSb has been grown on a compliant GaAs substrate by molecular beam epitaxy. This SL was designed for photoconductive infrared (IR) detection in the long wavelength IR band. The spectral photoresponse of this SL shows a sharp onset at 76.9 meV and a corresponding cutoff wavelength at 13.9 μm. A sixfold increase in the peak photoresponse was measured in comparison to the response from a similar SL on a standard GaSb substrate.

Keywords

III-V semiconductors; gallium arsenide; infrared detectors; molecular beam epitaxial growth; photoconducting devices; semiconductor superlattices; substrates; 13.9 mum; 76.9 meV; GaAs; InAs-InGaSb; compliant GaAs substrate; cutoff wavelength; long wavelength IR band; molecular beam epitaxy; peak photoresponse; photoconductive IR detection; sharp onset; spectral photoresponse; type-II superlattice photodetector; Electromagnetic wave absorption; Gallium alloys; Gallium arsenide; Infrared detectors; Mercury (metals); Photodetectors; Substrates; Superlattices; Tellurium; Tin alloys;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.849084

Filename

849084