DocumentCode :
1352977
Title :
16 x 10 Gb/s WDM bidirectional gating in a semiconductor optical amplifier for optical cross connects exploiting network connection symmetry
Author :
Yu, Jianjun ; Buxens, Alvaro ; Clausen, Anders ; Jeppesen, Palle
Author_Institution :
Res. Center COM, Tech. Univ., Lyngby, Denmark
Volume :
12
Issue :
6
fYear :
2000
fDate :
6/1/2000 12:00:00 AM
Firstpage :
702
Lastpage :
704
Abstract :
In order to further reduce the number of gating elements in space switches, the performance of 10 Gb/s wavelength division multiplexing (WDM) bidirectional semiconductor optical amplifier (SOA) gating is investigated, We demonstrate for the first time that a conventional SOA can be used for bidirectional WDM gating operation at 10 Gb/s by the use of holding light injection.
Keywords :
optical interconnections; optical switches; optical transmitters; semiconductor optical amplifiers; symmetry; wavelength division multiplexing; 10 Gbit/s; 160 Gbit/s; Gb/s WDM bidirectional gating; Gb/s wavelength division multiplexing; bidirectional WDM gating operation; bidirectional semiconductor optical amplifier gating; gating elements; holding light injection; network connection symmetry; optical cross connects; semiconductor optical amplifier; Distributed feedback devices; Extinction ratio; Frequency; Optical fiber communication; Optical fiber networks; Optical switches; Semiconductor laser arrays; Semiconductor optical amplifiers; Stimulated emission; Wavelength division multiplexing;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.849090
Filename :
849090
Link To Document :
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