DocumentCode :
1353129
Title :
Unified model for junction size, substrate doping, and energy dependence of α-particle-induced charge collection
Author :
Shin, Hyungsoon
Author_Institution :
Dept. of Electron. Eng., Ewha Womans Univ., Seoul, South Korea
Volume :
32
Issue :
20
fYear :
1996
fDate :
9/26/1996 12:00:00 AM
Firstpage :
1880
Lastpage :
1882
Abstract :
A model for the α-particle-induced charge collection has been developed. By accounting for the funnelling and diffusion charges separately, our model accurately describes the junction size dependence of collected charge for a wide range of junction sizes, substrate doping levels, and α-particle energies
Keywords :
DRAM chips; alpha-particle effects; integrated circuit modelling; α-particle-induced charge collection; DRAM; diffusion charges; energy dependence; funnelling charges; junction size; model; substrate doping;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961270
Filename :
535172
Link To Document :
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