Title :
High-responsivity low-dark-current InGaAlAs waveguide photodiode with a symmetric double-core for optical access networks
Author :
Shishikura, M. ; Nakamura, H. ; Tanaka, S. ; Matsuoka, Y. ; Ono, T. ; Miyazaki, T. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
9/26/1996 12:00:00 AM
Abstract :
A symmetric InGaAlAs waveguide photodiode for low cost optical hybrid integration is designed and fabricated. High responsivity of 0.95 A/W and coupling tolerance of ±2.6 μm, obtained by optimising the double core structure are demonstrated. Dark current as low as 300 pA is achieved by using surface passivation
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; optical fibre subscriber loops; optical waveguide components; photodiodes; InGaAlAs; InGaAlAs waveguide photodiode; coupling tolerance; dark current; optical access network; optical hybrid integration; responsivity; surface passivation; symmetric double-core;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961243
