DocumentCode
1353239
Title
Chirp tailoring in Q-switched InGaAsP lasers using electroabsorption loss section
Author
Thedrez, B. ; Lourtioz, J.M. ; Bouchoule, S. ; Kazmierski, C.
Author_Institution
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
Volume
32
Issue
20
fYear
1996
fDate
9/26/1996 12:00:00 AM
Firstpage
1886
Lastpage
1888
Abstract
Chirp tailoring is demonstrated in Q-switched two-section InGaAsP lasers, with RF modulation applied to an electroabsorption section of high saturation intensity. The pulse time-bandwidth product is varied by a factor of ~4, by changing the DC bias of the gain section. Pulses which are almost transform-limited are obtained for the lowest biases. Gain-switching experiments performed with the same lasers only show a moderate chirp dependence with bias. The authors give theoretical background to interprete the different behaviours
Keywords
III-V semiconductors; Q-switching; chirp modulation; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical losses; semiconductor lasers; DC bias; InGaAsP; Q-switched two-section InGaAsP laser; RF modulation; chirp tailoring; electroabsorption loss section; gain section; gain switching; pulse time-bandwidth product; saturation intensity; transform-limited pulses;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961265
Filename
535176
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