Layer Thickness and Stress-Dependent Correction for InGaAs Low-Field Mobility in TCAD Applications

A layer thickness and stress-dependent correction for InGaAs low-field mobility in technology computer-aided design applications is presented. This correction is based on a simplified phonon-limited mobility, which accounts for the geometrical quantization and stress effects. The stress effect is modeled with a linear deformation potential model for the valley energy change and a stress-related change of the effective mass and nonparabolicity of Γ valley. The model shows good agreement with known literature data for the dependence of the In_0.53Ga_0.47As mobility in double-gate structures on the layer thickness. Simulation results for the stress dependence of the mobility in In_1-xGa_xAs devices are also presented.