DocumentCode :
1353323
Title :
Yield optimization in large RAM´s with hierarchical redundancy
Author :
Ganapathy, Kumar N. ; Singh, Adit D. ; Pradhan, Dhiraj K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Volume :
26
Issue :
9
fYear :
1991
fDate :
9/1/1991 12:00:00 AM
Firstpage :
1259
Lastpage :
1264
Abstract :
The authors present and analyze large RAM architectures with hierarchical redundancy and determine the optimal redundancy organization for yield enhancement. A two-level redundancy scheme is used for defect tolerance, and the defect distribution is modeled using the compounded Poisson model. The tree random access memory (TRAM), which has been proposed as a design methodology for future multimegabit memories (N. Jarwala et al., 1988) is considered as an example for modeling and optimization. The results show that the two-level hierarchical redundancy approach, with spare bit and word lines within memory quadrants, and additional spare modules for global sparing, along with redundant interconnections can efficiently provide defect tolerance and viable yields for future generations of high-density dynamic random access memories
Keywords :
DRAM chips; memory architecture; redundancy; statistical analysis; TRAM; compounded Poisson model; defect tolerance; design methodology; dynamic random access memories; hierarchical redundancy; high density DRAM; large RAM architectures; multimegabit memories; optimal redundancy organization; tree random access memory; two-level redundancy scheme; yield enhancement; Circuit faults; DH-HEMTs; Design optimization; Integrated circuit yield; Memory architecture; Prototypes; Random access memory; Read-write memory; Redundancy; Semiconductor device modeling;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.84942
Filename :
84942
Link To Document :
بازگشت