DocumentCode :
1353509
Title :
BFET: a composite bipolar and FET transistor
Author :
Voo, Thart Fah ; Toumazou, C.
Author_Institution :
Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Volume :
32
Issue :
20
fYear :
1996
fDate :
9/26/1996 12:00:00 AM
Firstpage :
1926
Lastpage :
1928
Abstract :
The authors describe a new structure which uses the MOSFET and bipolar transistor to construct a device which has large gm, the logarithmic high dynamic range of the BJT, and the high input impedance of the MOSFET
Keywords :
MOSFET; bipolar transistors; transistors; BFET; MOSFET; composite bipolar/FET transistor; high input impedance; large transconductance; logarithmic high dynamic range;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961276
Filename :
535220
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1353509
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