• DocumentCode
    1353509
  • Title

    BFET: a composite bipolar and FET transistor

  • Author

    Voo, Thart Fah ; Toumazou, C.

  • Author_Institution
    Dept. of Electr. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
  • Volume
    32
  • Issue
    20
  • fYear
    1996
  • fDate
    9/26/1996 12:00:00 AM
  • Firstpage
    1926
  • Lastpage
    1928
  • Abstract
    The authors describe a new structure which uses the MOSFET and bipolar transistor to construct a device which has large gm, the logarithmic high dynamic range of the BJT, and the high input impedance of the MOSFET
  • Keywords
    MOSFET; bipolar transistors; transistors; BFET; MOSFET; composite bipolar/FET transistor; high input impedance; large transconductance; logarithmic high dynamic range;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961276
  • Filename
    535220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1353509