Title :
GaAs low-high doped MESFET MMIC power amplifier for CDMA/AMPS dual-mode cellular telephone
Author :
Roh, T.M. ; Suh, Y. ; Kim, B. ; Park, W. ; Lee, J.B. ; Kim, Y.-S. ; Lee, G.Y.
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea
fDate :
9/26/1996 12:00:00 AM
Abstract :
An MMIC power amplifier using low-high doped GaAs MESFETs (LH-MESFETs) has been developed for a CDMA/AMPS dual mode cellular telephone. It is fully integrated on one chip (2.5×2.9 mm2 ) including all matching circuits. For CDMA operation at frequency of 836.5 MHz, an efficiency of 25%, adjacent channel leakage power of -29 dBc at 885 kHz, and -48 dBc at 1980 kHz were obtained with an output power of 27.25 dBm and Vdd=4.7 V. In AMPS operation, 30.5 dBm output power was obtained with 27.5 dB gain and 47% efficiency. The experimental results show that the gate periphery of LH-MESFETs and size of MMIC are much smaller than in previously reported similar amplifiers using conventional MESFET technology. This MMIC power amplifier is suitable for dual mode cellular applications
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; code division multiple access; cordless telephone systems; field effect MMIC; gallium arsenide; 1980 kHz; 25 percent; 27.5 dB; 4.7 V; 47 percent; 824 to 849 MHz; 885 kHz; AMPS operation; CDMA operation; GaAs; GaAs MMIC power amplifier; dual-mode cellular telephone; low-high doped MESFET; matching circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961280
