Title :
High voltage (450 V) 6H-SiC lateral MESFET structure
Author :
Alok, D. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
fDate :
9/26/1996 12:00:00 AM
Abstract :
A high voltage 6H-SiC lateral MESFET has been fabricated using a three mask process. Selective ion implantation was used to create the conducting layer (N-region) demonstrating the RESURF effect in SiC for first time, as well as easy isolation and edge termination. This MESFET was able to withstand a forward blocking voltage of 450 V at a gate voltage of -20 V. The specific on-resistance and transconductance for a device with a drain gate separation of 15 μm was found to be 83 mΩ cm2 and 2 mS/mm, respectively
Keywords :
electric breakdown; ion implantation; power MESFET; silicon compounds; wide band gap semiconductors; -20 V; 450 V; 6H-SiC; HV device; RESURF effect; SiC; high voltage MESFET; lateral MESFET structure; selective ion implantation; three mask process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961287
