DocumentCode
1353607
Title
High voltage (450 V) 6H-SiC lateral MESFET structure
Author
Alok, D. ; Baliga, B.J.
Author_Institution
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Volume
32
Issue
20
fYear
1996
fDate
9/26/1996 12:00:00 AM
Firstpage
1929
Lastpage
1931
Abstract
A high voltage 6H-SiC lateral MESFET has been fabricated using a three mask process. Selective ion implantation was used to create the conducting layer (N-region) demonstrating the RESURF effect in SiC for first time, as well as easy isolation and edge termination. This MESFET was able to withstand a forward blocking voltage of 450 V at a gate voltage of -20 V. The specific on-resistance and transconductance for a device with a drain gate separation of 15 μm was found to be 83 mΩ cm2 and 2 mS/mm, respectively
Keywords
electric breakdown; ion implantation; power MESFET; silicon compounds; wide band gap semiconductors; -20 V; 450 V; 6H-SiC; HV device; RESURF effect; SiC; high voltage MESFET; lateral MESFET structure; selective ion implantation; three mask process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961287
Filename
535222
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