• DocumentCode
    1353634
  • Title

    Design of Integrated Gate Driver With Threshold Voltage Drop Cancellation in Amorphous Silicon Technology for TFT-LCD Application

  • Author

    Chu, Li-Wei ; Liu, Po-Tsun ; Ker, Ming-Dou

  • Author_Institution
    Dept. of Photonics & Display Inst., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    7
  • Issue
    12
  • fYear
    2011
  • Firstpage
    657
  • Lastpage
    664
  • Abstract
    A new integrated gate driver has been successfully designed and fabricated by amorphous silicon (a-Si) technology for a 3.8-in WVGA (800 × 480) TFT-LCD panel. With the proposed threshold voltage drop-cancellation technique, the output rise time of the proposed integrated gate driver can be substantially decreased by 24.6% for high-resolution display application. Moreover, the proposed noise reduction path between the adjacent gate drivers can reduce the layout area for slim bezel display. The transmittance brightness and contrast ratio of the demonstrated 3.8-inch panel show almost no degradation after the 500 h operation under 70°C and -20°C conditions.
  • Keywords
    electric potential; elemental semiconductors; liquid crystal displays; silicon; thin film transistors; Si; WVGA TFT-LCD panel; amorphous technology; high-resolution display application; integrated gate driver; size 3.8 inch; slim bezel display; temperature -20 degC; temperature 70 degC; threshold voltage drop cancellation technique; Liquid crysal displays; Logic gates; Noise measurement; Noise reduction; Thin film transistors; Threshold voltage; Amorphous silicon (a-Si); gate driver; thin-film transistor liquid-crystal display (TFT-LCD);
  • fLanguage
    English
  • Journal_Title
    Display Technology, Journal of
  • Publisher
    ieee
  • ISSN
    1551-319X
  • Type

    jour

  • DOI
    10.1109/JDT.2011.2162937
  • Filename
    6052150