DocumentCode :
1353713
Title :
Resistive Switching Properties of 
Structure for Low-Voltage Nonvolatile Memory Applications
Author :
Li, Yingtao ; Long, Shibing ; Zhang, Manhong ; Liu, Qi ; Shao, Lubing ; Zhang, Sen ; Wang, Yan ; Zuo, Qingyun ; Liu, Su ; Liu, Ming
Author_Institution :
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China
Volume :
31
Issue :
2
fYear :
2010
Firstpage :
117
Lastpage :
119
Abstract :
The reliable resistive switching properties of Au/ZrO2/ Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 104), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 ??C). Moreover, the benefits of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.
Keywords :
gold; low-power electronics; random-access storage; zirconium compounds; Au-ZrO2-Ag; low-voltage nonvolatile memory; resistance random access memory; resistive switching property; $hbox{ZrO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2036276
Filename :
5352234
Link To Document :
