Mitigation of Voltage Defect for High-Efficiency InP Diode Lasers Operating at Cryogenic Temperatures

Author

Leisher, Paul O. ; Dong, Weimin ; Grimshaw, Mike P. ; DeFranza, Mark J. ; Dubinskii, Mark A. ; Patterson, Steve G.

Author_Institution

nLight Corp., Vancouver, WA, USA

Volume

22

Issue

24

fYear

2010

Firstpage

1829

Lastpage

1831

Abstract

The power conversion efficiency of cryogenically cooled InP-based diode lasers is limited by excess electrical voltage caused by the freeze-out of holes at low temperature. Hall-effect measurements are performed to determine the ionization energy of Zn in bulk InP and In_0.90Ga_0.10As_0.24P_0.76 (the values obtained are 18.6 and 11.6 meV, respectively). A laser design with an InGaAsP p-cladding layer shows a large decrease in the 77 K voltage defect relative to a more traditional InP design. Peak conversion efficiency of 73% and >10-W maximum power are reported at 1493 nm from a single 200-μm stripe laser operating at 77 K.

Keywords

Hall effect; III-V semiconductors; cryogenics; gallium arsenide; indium compounds; semiconductor lasers; zinc; Hall-effect measurement; In_0.90Ga_0.10As_0.24P_0.76:Zn; InP:Zn; cryogenically cooled diode lasers; ionization energy; p-cladding layer; power conversion efficiency; single stripe laser; size 200 mum; temperature 77 K; voltage defect; wavelength 1493 nm; Current measurement; Diode lasers; Indium phosphide; Laser excitation; Semiconductor lasers; Temperature measurement; Voltage measurement; Cryogenic; Er : YAG; diode lasers; diode-pumped solid-state laser; eye-safe; high efficiency; high power;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2088115

Filename

5604652