DocumentCode :
1354198
Title :
Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45-nm SOI CMOS
Author :
Moen, Kurt A. ; Phillips, Stanley D. ; Wilcox, Edward P. ; Cressler, John D. ; Nayfeh, Hasan ; Sutton, Akil K. ; Warner, Jeffrey H. ; Buchner, Stephen P. ; McMorrow, Dale ; Vizkelethy, Gyorgy ; Dodd, Paul
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
57
Issue :
6
fYear :
2010
Firstpage :
3366
Lastpage :
3372
Abstract :
We investigate the single-event transient (SET) response of T-body and notched-body contacted MOSFETs from a commercial 45 nm SOI RF-CMOS technology. Although body-contacted devices suffer from reduced RF performance compared to floating body devices, previous work on 65 nm and 90 nm MOSFETs has shown that the presence of a body-contact significantly mitigates the total ionizing dose (TID) sensitivity that is exhibited in floating-body SOI MOSFETs. The influence of body-contacting schemes on the single-event effect (SEE) sensitivity is examined here through time-resolved measurements of laser and microbeam-induced transients from T-body and notched-body MOSFETs. Laser-induced transients demonstrate the reduced SEE sensitivity of the notched-body MOSFETs as compared to the T-body MOSFETs; this is evidenced by a uniform reduction in the peak transient magnitudes and collected charge for transients captured at the worst-case bias of VDS = 1.0 V, as well as with all terminals grounded. Microbeam-induced transient data are also presented to support the validity of the laser-induced transient data. Together, these data provide new insight into the RF versus TID versus SEE tradeoffs associated with body contacting schemes in nm-scale MOSFETs, an important concern for emerging space-based electronics applications.
Keywords :
CMOS integrated circuits; MOSFET; radiofrequency integrated circuits; silicon-on-insulator; SEE; SET; SOI RF-CMOS technology; Si; TID; body-contacted devices; floating body devices; laser-induced transients; microbeam-induced transients; nm-scale MOSFET; notched-body contacted MOSFET; peak transient magnitudes; silicon-on-insulator; single event transients; single-event effect; space-based electronics applications; total ionizing dose sensitivity; various body-contacting schemes; CMOS technology; Measurement by laser beam; Pulsed laser deposition; Sensitivity; Silicon on insulator technology; Single event transient; Transient analysis; 45 nm; CMOS; SOI; Single-Event Transient (SET); boy-contact;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2010.2076304
Filename :
5604716
Link To Document :
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