Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains

Author

Dodd, Paul E. ; Shaneyfelt, Marty R. ; Flores, Richard S. ; Schwank, James R. ; Hill, Thomas A. ; McMorrow, Dale ; Vizkelethy, Gyorgy ; Swanson, Scot E. ; Dalton, Scott M.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

58

Issue

6

fYear

2011

Firstpage

2695

Lastpage

2701

Abstract

Single-event upsets are studied in digital logic cells in a radiation-hardened CMOS SOI technology. The sensitivity of SEU to different strike locations and hardening approaches is explored using broadbeam and focused beam experiments. Error distributions in chains of logic flip-flops are studied to determine the impact of various cell designs and hardening techniques on upset uniformity.

Keywords

CMOS logic circuits; flip-flops; radiation hardening (electronics); silicon-on-insulator; broadbeam experiment; cell designs; digital logic cells; error distributions; focused beam experiment; hardening approaches; hardening techniques; radiation-hardened CMOS SOI technology; radiation-hardened CMOS flip-flop logic chains; single-event distributions; single-event upset sensitivity; strike locations; upset uniformity; Application specific integrated circuits; Flip-flops; Radiation effects; Radiation hardening; Silicon on insulator technology; Single event transient; Single event upset; Application specific integrated circuits (ASICs); flip-flops; ion radiation effects; radiation effects; radiation hardening; silicon-on-insulator (SOI) technology; single-event effects; single-event transients (SET); single-event upset (SEU); soft error rate;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2169683

Filename

6054041