Title :
Influence of trench-oxide depth on junction-size dependence of α-particle-induced charge collection [DRAMs]
Author :
Sun, Wookyung ; Park, Ji-Sun ; Shin, Hyurigsoon
Author_Institution :
Dept. of Electron. Eng., Ewha W. Univ., Seoul, South Korea
fDate :
6/22/2000 12:00:00 AM
Abstract :
The effect of trench-oxide depth on the α-particle-induced charge collection is analysed for various junction sizes. Simulation results indicate that the influence of trench-oxide depth on the charge collection substantially increases as the junction size is reduced. Confinement of the charge by the trench oxide in the reduced junction size is identified as a cause of this effect
Keywords :
DRAM chips; α-particle-induced charge collection; DRAMs; junction-size dependence; memory cell size; trench-oxide depth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000802
