DocumentCode
1354426
Title
Diode lasers emitting near 3.44 μm in continuous-wave regime at 300K
Author
Hosoda, T. ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.
Author_Institution
State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Volume
46
Issue
21
fYear
2010
fDate
10/1/2010 12:00:00 AM
Firstpage
1455
Lastpage
1457
Abstract
A continuous-wave, room temperature operation of type-I quantum well diode lasers was extended above 3.4 μm. The laser heterostructure, optimised for minimum threshold carrier concentration, was pseudomorphically grown by solid source molecular beam epitaxy on GaSb. Multimode lasers generate 29 mW of output power at 17°C.
Keywords
molecular beam epitaxial growth; semiconductor lasers; continuous-wave regime; laser heterostructure; minimum threshold carrier concentration; multimode lasers; pseudomorphically grown; solid source molecular beam epitaxy; temperature 293 K to 298 K; temperature 300 K; type-I quantum well diode lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.2564
Filename
5604807
Link To Document