DocumentCode :
1354669
Title :
Modeling the subthreshold swing in MOSFET´s
Author :
Vandamme, E.P. ; Jansen, Ph. ; Deferm, L.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
18
Issue :
8
fYear :
1997
Firstpage :
369
Lastpage :
371
Abstract :
This letter reports on the bias-dependence of the inverse subthreshold slope or subthreshold swing in MOSFET´s. It is shown by calculations and verified by experiments that the subthreshold swing varies with gate bias and exhibits a global minimum. The gate-source voltage for which minimum subthreshold swing is reached, is linearly related to the voltage at which moderate inversion starts. Influence of oxide thickness and temperature is investigated. The subthreshold swing is an important parameter in modeling the weak inversion regime, especially for high-gain analog applications, imaging circuits, and low-voltage applications. Based on calculations of the subthreshold swing, we propose a new model for the diffusion component of the drain leakage current in MOSFET´s. The model accurately predicts the temperature dependence of the drain leakage current.
Keywords :
MOSFET; semiconductor device models; MOSFET; diffusion current; drain leakage current; gate bias; high-gain analog circuit; imaging circuit; inverse subthreshold slope; low-voltage circuit; model; oxide thickness; subthreshold swing; temperature dependence; weak inversion; Analog circuits; Differential amplifiers; Leakage current; MOSFET circuits; Photonic band gap; Predictive models; Silicon; Temperature dependence; Threshold voltage; Transconductors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.605442
Filename :
605442
Link To Document :
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