The anomalous behavior of hydrogenated/unhydrogenated polysilicon thin-film transistors under electric stress

Author

Lee, K.Y. ; Fang, Y.K. ; Chen, C.W. ; Huang, K.C. ; Liang, M.S. ; Wuu, S.G.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

18

Issue

8

fYear

1997

Firstpage

382

Lastpage

384

Abstract

The characteristics of high-temperature processed thin-film transistors (TFT´s) with/without plasma hydrogenation under the stress condition of V/sub ds/=-15 V and V/sub gs/=0 V have been investigated and compared. It is found that, after stress, the subthreshold swing is greatly improved for unhydrogenated TFT´s but not for hydrogenated TFT´s. Also, the off-state current is deteriorated for unhydrogenated TFT´s but, on the contrary, it is improved for hydrogenated TFT´s. A model that takes the effect of hydrogen passivation into account is proposed to interpret the anomalous behavior of TFT´s under electric stress.

Keywords

elemental semiconductors; passivation; semiconductor technology; silicon; thin film transistors; Si:H; electric stress; high-temperature processing; hydrogen passivation; off-state current; plasma hydrogenation; polysilicon thin-film transistor; subthreshold swing; Boron; Chemical vapor deposition; Hydrogen; Passivation; Plasma applications; Plasma properties; Plasma temperature; Stress; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.605446

Filename

605446