• DocumentCode
    1354747
  • Title

    Turn-off performance evaluations of trench-gate IGBT under soft switching

  • Author

    Iwamoto, H. ; Kawakami, A. ; Kondo, H. ; Nakaoka, M.

  • Author_Institution
    Power Semicond. Devices Div., Mitsubishi Electr. Corp., Fukuoka, Japan
  • Volume
    36
  • Issue
    10
  • fYear
    2000
  • fDate
    5/11/2000 12:00:00 AM
  • Firstpage
    915
  • Lastpage
    916
  • Abstract
    Turn-off performance evaluations of trench-gate insulated gate bipolar transistors (IGBTs) under a zero voltage soft switching commutation scheme are presented. It is noted that the developed trench-gate IGBT has lower turn-off power losses due to soft switching in addition to having a low conduction loss
  • Keywords
    insulated gate bipolar transistors; conduction loss; trench-gate insulated gate bipolar transistor; turn-off power loss; zero voltage soft switching commutation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000679
  • Filename
    850527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1354747