DocumentCode
1354759
Title
Voltage dependence of light-emitting zone in aluminum-hydroxyquinoline layers of organic heterojunction EL devices
Author
Matsumura, Michio ; Jinde, Yukitoshi
Author_Institution
Res. Center for Photomagnet. of Organic Mater., Osaka Univ., Japan
Volume
44
Issue
8
fYear
1997
fDate
8/1/1997 12:00:00 AM
Firstpage
1229
Lastpage
1233
Abstract
Spectra of EL emission from the devices having a thick layer of aluminum-hydroxyquinoline as the light-emitting material were altered by the voltages applied to the organic EL devices. From the analysis of the spectra, it was concluded that under the normal operational conditions the emissive zone locates in the light-emitting layer in the region about 22 nm in depth from the organic/organic interface. At low applied voltages, however, the emissive zone extends into the bulk of the light-emitting layer. Such a change in the emissive zone was explained on the basis of the difference in the barrier heights for the injections of electrons and holes from electrodes and the difference in the mobilities of electrons and holes. At low voltages, injection of electrons becomes difficult owing to the large barrier height. As a result, the holes diffuse into the bulk of the light-emitting layer before they recombine with electrons, leading to the expansion of the light-emitting zone
Keywords
electroluminescence; electroluminescent devices; electron mobility; electron-hole recombination; hole mobility; organic compounds; organic semiconductors; EL emission spectra; aluminum-hydroxyquinoline layers; barrier height difference; electron hole recombination; electron injection; electron mobility; hole diffusion; hole injection; hole mobility; light-emitting zone; low applied voltages; normal operational conditions; organic heterojunction EL devices; organic/organic interface; photoluminescence spectrum; voltage dependence; Charge carrier processes; Conducting materials; Electron mobility; Fluorescence; Heterojunctions; Interference; Low voltage; Organic materials; Radiative recombination; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.605459
Filename
605459
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