DocumentCode :
1354766
Title :
Characteristics of the Fluorinated High- k Inter-Poly Dielectrics
Author :
Hsieh, Chih-Ren ; Chen, Yung-Yu ; Lu, Kwung-Wen ; Lin, Gray ; Lou, Jen-Chung
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Volume :
31
Issue :
12
fYear :
2010
Firstpage :
1446
Lastpage :
1448
Abstract :
In this letter, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al2O3) and hafnium oxide (HfO2) inter-poly dielectric (IPD) are studied for the first time. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al2O3 and HfO2 IPDs, mainly ascribed to the trap density reduction and the smooth interface. Although HfO2 possesses higher dielectric constant to increase the gate coupling ratio, the results apparently indicate that the fluorine incorporation process is more effective to improve the dielectric characteristics of the Al2 O3 IPD than the HfO2 IPD.
Keywords :
aluminium compounds; hafnium compounds; high-k dielectric thin films; Al2O3; HfO2; dielectric characteristics; fluorinated aluminum oxide; fluorinated high-k inter-poly dielectrics; fluorine incorporation process; hafnium oxide; insulating characteristics; smooth interface; trap density reduction; Aluminum oxide; Dielectrics; High K dielectric materials; Leakage current; Logic gates; $hbox{Al}_{2}hbox{O}_{3}$; $hbox{HfO}_{2}$; fluorine;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2074181
Filename :
5605221
Link To Document :
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