Title :
Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance
Author :
Kim, Wandong ; Lee, Jung Hoon ; Yun, Jang-Gn ; Cho, Seongjae ; Li, Dong-Hua ; Kim, Yoon ; Kim, Doo-Hyun ; Lee, Gil Sung ; Park, Se-Hwan ; Shim, Won Bo ; Lee, Jong-Ho ; Shin, Hyungcheol ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
Abstract :
In this letter, a novel SONOS NAND Flash memory array featuring arch-shaped silicon fin and extended word lines (WL) is proposed to improve virtual source/drain (VSD) performance. The arch shape concentrates electric field, resulting in higher electron concentration at the VSD region and higher on -state cell current. In addition, the extended WL process improves the short-channel-effect (SCE) immunity and I-V characteristics. To verify these, an arch VSD NAND array device was fabricated and characterized. The integrated device shows very small SCE while obtaining high on-state cell current. Program and disturbance characteristics of the device are also confirmed.
Keywords :
NAND circuits; flash memories; SONOS NAND flash memory array; arch NAND flash memory array; arch-shaped silicon fin; extended word lines; short-channel-effect immunity; virtual source/drain performance; Arrays; Flash memory; Performance evaluation; SONOS devices; Silicon; Extended word line (WL); Flash memory; field concentration effect; virtual source/drain (VSD);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2074180
