مرکز منطقه ای اطلاع رساني علوم و فناوري - <formula formulatype="inline"> <img src="/images/tex/1010.gif" alt="\\hbox {Al}_{2}\\hbox {O}_{3}"> </formula>-Based RRAM Using Atomic Layer Deposition (ALD) With 1-<formula formulatype="inline"> <img src="/images/tex/16812.gif" alt="\\mu\\hbox {A}"> </fo

Title :

$\\hbox {Al}_{2}\\hbox {O}_{3}$ -Based RRAM Using Atomic Layer Deposition (ALD) With 1- $\\mu\\hbox {A}$

Author :

Wu, Yi ; Lee, Byoungil ; Wong, H. -S Philip

Author_Institution :

Electr. Eng. Dept., Stanford Univ., Stanford, CA, USA

Volume :

Issue :

fYear :

2010

Firstpage :

1449

Lastpage :

1451

Abstract :

Al₂O₃-based RRAM devices were fabricated using atomic layer deposition under 100°C and 300°C deposition temperatures, respectively, and their resistance-switching behaviors were investigated. Both devices show unipolar switching if the top electrode (TE) is made of Ti/Al, whereas the bipolar phenomenon is observed when TE is pure aluminum. Devices fabricated at higher temperature give better uniformity and higher resistance ratio. Ultralow RESET current (~1 μA) was obtained, together with adequate voltage margin.

Keywords :

aluminium compounds; atomic layer deposition; random-access storage; switching circuits; Al₂O₃; RESET current; RRAM; atomic layer deposition; resistance-switching behaviors; top electrode; unipolar switching; Aluminum oxide; Annealing; Atomic layer deposition; Electrodes; Random access memory; Resistance; Switches; $hbox{Al}_{2}hbox{O}_{3}$; atomic layer deposition (ALD); resistive random access memory (RRAM); resistive switching;

fLanguage :

English

Journal_Title :

Electron Device Letters, IEEE

Publisher :

ieee

ISSN :

0741-3106

Type :

jour

DOI :

10.1109/LED.2010.2074177

Filename :

5605227

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1354809