Molecular design of hole transport material with various ionization potential for organic light-emitting diode applications

Author

Okutsu, Satoshi ; Onikubo, Toshikazu ; Tamano, Michiko ; Enokida, Toshio

Author_Institution

Tsukuba Res. Labs., Tokyo Ink Manuf. Co. Ltd., Ibaraki, Japan

Volume

44

Issue

8

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

1302

Lastpage

1306

Abstract

In this paper, we examine the effects of the properties for hole transport materials (HTM´s) on the performance of organic light-emitting diodes (OLED´s). The ionization potentials (I_p) of the HTM´s could be estimated by the Hammett constant of the substituent. We have synthesized a series of HTM´s with various I_p´s, which are called FTPD´s. The FTFD´s have high glass transition temperature above 80°C, because of their fluorene structure. We fabricated double-layer OLED´s with the FTPD´s. The I_p´s of the FTPD´s affected the driving voltage, although they did not affect the quantum efficiency

Keywords

glass transition; hole mobility; ionisation potential; light emitting diodes; organic semiconductors; thermal stability; 80 C; Hammett constant; double-layer structure; driving voltage; fluorene structure; high glass transition temperature; hole transport material; ionization potential; molecular design; organic LED applications; organic light-emitting diode; quantum efficiency; Absorption; Anodes; Cathodes; Charge carrier processes; Glass; Ionization; Organic light emitting diodes; Organic materials; Oxidation; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.605472

Filename

605472