Title :
2-V-operation /spl delta/-doped power HEMT´s for personal handy-phone systems
Author :
Lai, Yeong-Lin ; Chang, Edward Y. ; Chun-Yen Chang ; Liu, T.H. ; Wang, S.P. ; Hsu, H.-T.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A high-efficiency and high-power-density /spl delta/-doped AlGaAs/InGaAs HEMT with low adjacent channel leakage has been developed for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz /spl pi//4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.0-V-operation HEMT with a 1-mm gate width demonstrated a power-added efficiency of 45.3% and an output power density of 105 mW/mm. This is the highest power density ever reported by power transistors for the PHS. State-of-the-art results for the PHS operating at 2.0 V were achieved by the S-doped power HEMT for the first time.
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; cordless telephone systems; digital radio; gallium arsenide; indium compounds; land mobile radio; power HEMT; power field effect transistors; quadrature phase shift keying; /spl delta/-doped power HEMT; /spl pi//4-shifted QPSK modulated PHS standard signals; 1.9 GHz; 2 V; 45.3 percent; AlGaAs-InGaAs; AlGaAs/InGaAs HEMT; digital wireless personal handy-phone system; low adjacent channel leakage; output power density; power-added efficiency; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; Phase modulation; Power generation; Power transistors; Quadrature phase shift keying; Telephone sets; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
