Title :
Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 μm
Author :
Illek, S. ; Ultsch, A. ; Borchert, B. ; Egorov, A.Y. ; Riechert, H.
Author_Institution :
Corporate Res. Photonics, Infineon Technol., Munich, Germany
fDate :
4/13/2000 12:00:00 AM
Abstract :
The realisation is reported of oxide-confined narrow-stripe lasers incorporating GaInNAs/GaAs multiquantum wells (MQWs) grown by MBE using an RF nitrogen plasma source. Two oxidation layers are employed to achieve proper current confinement and waveguiding. These lasers, emitting close to 1300 nm, show record threshold currents as low as 11 mA. Slope efficiencies of 0.39 W/A and 15 mW output power at 120°C under pulsed operation demonstrate the high potential of the GaInNAs active material
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; waveguide lasers; 1.28 micron; 11 mA; 120 C; 15 mW; GaInAsN active material; GaInNAs-GaAs; MBE growth; MQW lasers; N; RF N plasma source; current confinement; low threshold lasing operation; multiquantum well lasers; narrow stripe oxide-confined laser; oxidation layers; semiconductor laser; waveguiding;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000586
