• DocumentCode
    1354940
  • Title

    High-performance planar inductor on thick oxidized porous silicon (OPS) substrate

  • Author

    Choong-Mo Nam ; Young-Se Kwon

  • Author_Institution
    Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
  • Volume
    7
  • Issue
    8
  • fYear
    1997
  • Firstpage
    236
  • Lastpage
    238
  • Abstract
    To obtain a high-performance planar inductor, we used the oxidized porous silicon (OPS) layer with 25-μm-thick SiO2 as substrate. The measured radio frequency (RP) performances of the planar Inductor on the OPS layer are comparable to those on the semi-insulating GaAs substrate. For a 6.29 nH inductor, resonant frequency of 13.8 GHz and maximum quality factor (Q) of 13.3 are obtained. These results show that the utilisation of the OPS layer can push silicon passive monolithic microwave integrated circuit (MMIC) technology at least up to 12 GHz.
  • Keywords
    MMIC; Q-factor; inductors; porous materials; silicon; substrates; thin film devices; 13.8 GHz; 25 micron; SHF; Si; Si passive MMIC; SiO/sub 2/; SiO/sub 2/-Si; high-performance planar inductor; maximum quality factor; monolithic microwave integrated circuit; resonant frequency; thick oxidized porous Si substrate; Frequency measurement; Gallium arsenide; Inductors; MMICs; Microwave integrated circuits; Performance evaluation; Q factor; Radio frequency; Resonant frequency; Silicon;
  • fLanguage
    English
  • Journal_Title
    Microwave and Guided Wave Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1051-8207
  • Type

    jour

  • DOI
    10.1109/75.605489
  • Filename
    605489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1354940