Title :
High-performance planar inductor on thick oxidized porous silicon (OPS) substrate
Author :
Choong-Mo Nam ; Young-Se Kwon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
To obtain a high-performance planar inductor, we used the oxidized porous silicon (OPS) layer with 25-μm-thick SiO2 as substrate. The measured radio frequency (RP) performances of the planar Inductor on the OPS layer are comparable to those on the semi-insulating GaAs substrate. For a 6.29 nH inductor, resonant frequency of 13.8 GHz and maximum quality factor (Q) of 13.3 are obtained. These results show that the utilisation of the OPS layer can push silicon passive monolithic microwave integrated circuit (MMIC) technology at least up to 12 GHz.
Keywords :
MMIC; Q-factor; inductors; porous materials; silicon; substrates; thin film devices; 13.8 GHz; 25 micron; SHF; Si; Si passive MMIC; SiO/sub 2/; SiO/sub 2/-Si; high-performance planar inductor; maximum quality factor; monolithic microwave integrated circuit; resonant frequency; thick oxidized porous Si substrate; Frequency measurement; Gallium arsenide; Inductors; MMICs; Microwave integrated circuits; Performance evaluation; Q factor; Radio frequency; Resonant frequency; Silicon;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
