Title :
Hot-carrier-induced degradation of N2O-oxynitrided gate oxide NMOSFETs
Author :
Matsuoka, Toshimasa ; Taguchi, Shigenari ; Ohtsuka, Hideki ; Taniguchi, Kenji ; Hamaguchi, Chihiro ; Kakimoto, Seizo ; Uda, Keiichiro
Author_Institution :
Dept. of Electron. Eng., Osaka Univ., Japan
fDate :
9/1/1996 12:00:00 AM
Abstract :
Measurement of long term electrical characteristics of N2 O-oxynitrided gate oxide NMOSFETs revealed that the role of the nitrogen-rich layer as a blocking barrier for molecular hydrogen diffusion is dominant in the reduced device degradation. A two-step model was proposed, in which the release of hydrogen species and their reaction with the trivalent silicon atoms are the main factors for hot-carrier-induced-degradation. Hot carrier immunity of the NMOSFETs was also found to originate partially from the small increase of both the effective barrier height for electron injection and the interface trap creation energy due to the negatively charged nitrogen-rich layer
Keywords :
MOSFET; diffusion barriers; electron traps; hot carriers; interface states; nitridation; oxidation; semiconductor device models; H species release; H2 diffusion barrier; N2O; N2O-oxynitrided gate oxide; NMOSFET; Si-SiON; blocking barrier; electron injection barrier height; electron trapping; hot-carrier-induced degradation; interface trap creation energy; long term electrical characteristics; negatively charged N-rich layer; trivalent Si atom reaction; two-step model; Atomic layer deposition; Degradation; Dielectrics; Electron traps; Furnaces; Hot carriers; Hydrogen; MOSFET circuits; Silicon; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
