High-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers with InGaAs-GaAsP strain-compensated quantum wells

Author

Hou, H.Q. ; Choquette, K.D. ; Geib, K.M. ; Hammons, B.E.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

9

Issue

8

fYear

1997

Firstpage

1057

Lastpage

1059

Abstract

We present the first room-temperature continuous-wave operation of high-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers (VCSEL´s). The lasers contain strain-compensated InGaAs-GaAsP quantum wells (QW´s) in the active region grown by metalorganic vapor phase epitaxy. The threshold current is 190 μA for a 2.5×2.5 μm² device, and the threshold voltage is as low as 1.255 V for a 6×6 μm² device. Lasing at a wavelength as long as 1.1 μm was also achieved. We discuss the wavelength limit for lasers using the strain-compensated QW´s on GaAs substrates.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical fabrication; photoluminescence; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 1.06 mum; 1.255 V; 190 muA; 298 K; GaAs substrates; InGaAs-GaAsP; active region; high performance selectively oxidised lasers; lasing; metalorganic vapor phase epitaxy; room-temperature continuous-wave operation; strain-compensated quantum wells; threshold current; threshold voltage; vertical-cavity surface-emitting lasers; wavelength limit; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Nonlinear optics; Optical interconnections; Optical surface waves; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.605498

Filename

605498