• DocumentCode
    1355007
  • Title

    Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

  • Author

    Arafin, Shamsul ; Bachmann, A. ; Kashani-Shirazi, K. ; Priyabadini, Swarnakamal ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
  • Volume
    3
  • Issue
    6
  • fYear
    2009
  • Firstpage
    259
  • Lastpage
    263
  • Abstract
    The authors present low-resistive ohmic contacts to lattice-matched n-type InAsSb on n-GaSb substrates, which are suitable for GaSb-based devices. Using wet chemical treatment as a surface preparation in order to remove the native oxides and evaporating Ti/Pt/Au metals sequentially, specific contact resistivities as low as 5.6 ?? 10-6 cm2 without any annealing are obtained. The resistivity decreases to 3.7 ?? 10-6 cm2 after annealing at 350??C for 90 s.
  • Keywords
    III-V semiconductors; annealing; arsenic compounds; gallium compounds; indium compounds; ohmic contacts; GaSb; InAsSb; annealing; lattice matching; low resistive ohmic contacts; sulphur treated ohmic contacts; surface preparation; temperature 350 degC; time 90 s; wet chemical treatment;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IET
  • Publisher
    iet
  • ISSN
    1751-8768
  • Type

    jour

  • DOI
    10.1049/iet-opt.2009.0038
  • Filename
    5353229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1355007