Title :
Low-resistive sulphur-treated ohmic contacts to n-type InAsSb
Author :
Arafin, Shamsul ; Bachmann, A. ; Kashani-Shirazi, K. ; Priyabadini, Swarnakamal ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
The authors present low-resistive ohmic contacts to lattice-matched n-type InAsSb on n-GaSb substrates, which are suitable for GaSb-based devices. Using wet chemical treatment as a surface preparation in order to remove the native oxides and evaporating Ti/Pt/Au metals sequentially, specific contact resistivities as low as 5.6 ?? 10-6 cm2 without any annealing are obtained. The resistivity decreases to 3.7 ?? 10-6 cm2 after annealing at 350??C for 90 s.
Keywords :
III-V semiconductors; annealing; arsenic compounds; gallium compounds; indium compounds; ohmic contacts; GaSb; InAsSb; annealing; lattice matching; low resistive ohmic contacts; sulphur treated ohmic contacts; surface preparation; temperature 350 degC; time 90 s; wet chemical treatment;
Journal_Title :
Optoelectronics, IET
DOI :
10.1049/iet-opt.2009.0038
