Title :
High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
Author :
Kuznetsov, M. ; Hakimi, F. ; Sprague, R. ; Mooradian, A.
Author_Institution :
Micracor Inc., Acton, MA, USA
Abstract :
We report demonstration of a new high-power semiconductor laser technology, the optically pumped semiconductor (OPS) vertical-external-cavity surface-emitting laser (VECSEL). Using diode laser pump, an OPS-VECSEL laser with a strain-compensated InGaAs-GaAsP-GaAs multiquantum-well (MQW) structure operated continuous-wave (CW) near /spl lambda//spl sim/1004 nm with record output power of 0.69 W in a TEM/sub 11/ mode, 0.52 W in a TEM/sub 00/ mode, and 0.37 W coupled to a single-mode fiber. It is feasible to produce greater than 1 W of power in a diffraction-limited circular beam from an efficient, compact, manufacturable and reliable OPS-VECSEL laser.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; laser reliability; optical fibre couplers; optical pumping; quantum well lasers; surface emitting lasers; 0.37 W; 0.52 W; 0.69 W; 1 W; 1004 nm; InGaAs-GaAsP-GaAs; InGaAs-GaAsP-GaAs laser; TEM/sub 00/ mode; TEM/sub 11/ mode; circular TEM/sub 00/ beams; continuous-wave laser; diffraction-limited circular beam; diode laser pump; high-power diode-pumped lasers; high-power semiconductor laser technology; optically pumped semiconductor vertical-external-cavity surface-emitting laser; output power; single-mode fiber; strain-compensated multiquantum-well structure; vertical-external-cavity surface-emitting semiconductor lasers; Fiber lasers; Laser excitation; Laser modes; Optical pumping; Power lasers; Pump lasers; Semiconductor diodes; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
