Title :
60 GHz high output power uni-travelling-carrier photodiodes with integrated bias circuit
Author :
Ito, H. ; Ohno, T. ; Fishimi, H. ; Furuta, T. ; Kodama, S. ; Ishibashi, T.
Author_Institution :
NTT Photonics Lab., Atsugi, Japan
fDate :
4/13/2000 12:00:00 AM
Abstract :
A millimetre-wave high-output-power uni-travelling-carrier photodiode with a monolithically integrated bias circuit utilising a 1/4-wavelength coplanar waveguide is presented. The device exhibits a high saturated output power of +10 dBm with a bias voltage or -3 V, and -6 dBm without a bias voltage, both at 59.4 GHz
Keywords :
MIMIC; MOCVD; microwave photonics; optical fabrication; optical planar waveguides; optical waveguide components; photodiodes; power integrated circuits; power semiconductor diodes; -3 V; 1/4-wavelength coplanar waveguide; 59.4 GHz; 60 GHz; bias voltage; high output power uni-travelling-carrier photodiodes; integrated bias circuit; millimetre-wave high-output-power uni-travelling-carrier photodiode; monolithically integrated bias circuit; saturated output power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000564
