GaAs/AlGaAs waveguide pin photodiodes with non-absorbing input facets fabricated by quantum well intermixing

Author

McDougall, S.D. ; Jubber, M.J. ; Kowalski, O.P. ; Marsh, J.H. ; Aitchison, J.S.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

36

Issue

8

fYear

2000

fDate

4/13/2000 12:00:00 AM

Firstpage

749

Lastpage

750

Abstract

Waveguide photodiodes with non-absorbing input windows have been fabricated using a sputtered silica quantum well intermixing technique. Thermal modelling of the GaAs/AlGaAs photodiodes indicates that facet temperatures can be significantly reduced with window lengths of greater than 10 μm. Device testing shows that optical damage occurs at double the power of conventional photodiodes with absorbing facets

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical fabrication; optical planar waveguides; optical waveguide components; p-i-n photodiodes; p-n heterojunctions; semiconductor device testing; 10 mum; GaAs-AlGaAs; GaAs/AlGaAs photodiodes; GaAs/AlGaAs waveguide pin photodiodes; absorbing facets; conventional photodiodes; device testing; fabrication; facet temperature; nonabsorbing input facets; nonabsorbing input windows; optical damage; quantum well intermixing; sputtered silica quantum well intermixing technique; thermal modelling; waveguide photodiodes; window lengths;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000589

Filename

850573