Title :
GaAs/AlGaAs waveguide pin photodiodes with non-absorbing input facets fabricated by quantum well intermixing
Author :
McDougall, S.D. ; Jubber, M.J. ; Kowalski, O.P. ; Marsh, J.H. ; Aitchison, J.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
4/13/2000 12:00:00 AM
Abstract :
Waveguide photodiodes with non-absorbing input windows have been fabricated using a sputtered silica quantum well intermixing technique. Thermal modelling of the GaAs/AlGaAs photodiodes indicates that facet temperatures can be significantly reduced with window lengths of greater than 10 μm. Device testing shows that optical damage occurs at double the power of conventional photodiodes with absorbing facets
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical fabrication; optical planar waveguides; optical waveguide components; p-i-n photodiodes; p-n heterojunctions; semiconductor device testing; 10 mum; GaAs-AlGaAs; GaAs/AlGaAs photodiodes; GaAs/AlGaAs waveguide pin photodiodes; absorbing facets; conventional photodiodes; device testing; fabrication; facet temperature; nonabsorbing input facets; nonabsorbing input windows; optical damage; quantum well intermixing; sputtered silica quantum well intermixing technique; thermal modelling; waveguide photodiodes; window lengths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000589
