Title :
RF saturation mechanism of InP/InGaAs uni-travelling-carrier photodiode
Author :
Shimizu, N. ; Miyamoto, Y. ; Hirano, A. ; Sato, K. ; Ishibashi, T.
Author_Institution :
NTT Network Innovation Lab., Kanagawa, Japan
fDate :
4/13/2000 12:00:00 AM
Abstract :
A study into the RF output power limit for an InP/InGaAs uni-travelling-carrier photodiode (UTC-PD) is presented. The measured 1 dB compression power of a UTC-PD at 40 GHz was found to be as high as 9 dBm. From the bias voltage dependence of the saturation power, it was found that the space charge effect in the collector layer is mainly responsible for the RF saturation
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microwave photonics; millimetre wave diodes; millimetre wave generation; optical fabrication; p-n heterojunctions; photodiodes; space charge; 40 GHz; InP-InGaAs; InP/InGaAs; RF output power limit; RF saturation; RF saturation mechanism; bias voltage dependence; collector; compression power; saturation power; space charge effect; uni-travelling-carrier photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000555
