Title :
Dependence of the linewidth enhancement factor on the number of compressively strained quantum well in lasers
Author :
Cho, S.H. ; Lu, C.C. ; Hovinen, M. ; Nam, K. ; Vusirikala, V. ; Song, J.H. ; Johnson, F.G. ; Stone, D. ; Dagenais, M.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
We have systematically studied the well number dependence of the linewidth enhancement factor in strained quantum-well (QW) lasers and have demonstrated experimentally that the linewidth enhancement factor can be reduced from /spl sim/9.4 to /spl sim/2.0 by increasing the number of compressively strained QW´s from 2 to 8. This behavior is primarily due to an increase in the differential gain with the number of QW´s.
Keywords :
laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; compressively strained quantum well; differential gain; lasers; linewidth enhancement factor; strained quantum-well lasers; well number dependence; Chemical lasers; Indium phosphide; Laser modes; Laser theory; Molecular beam epitaxial growth; Quantum well devices; Quantum well lasers; Semiconductor lasers; Waveguide lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
