• DocumentCode
    1355061
  • Title

    Dependence of the linewidth enhancement factor on the number of compressively strained quantum well in lasers

  • Author

    Cho, S.H. ; Lu, C.C. ; Hovinen, M. ; Nam, K. ; Vusirikala, V. ; Song, J.H. ; Johnson, F.G. ; Stone, D. ; Dagenais, M.

  • Author_Institution
    Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
  • Volume
    9
  • Issue
    8
  • fYear
    1997
  • Firstpage
    1081
  • Lastpage
    1083
  • Abstract
    We have systematically studied the well number dependence of the linewidth enhancement factor in strained quantum-well (QW) lasers and have demonstrated experimentally that the linewidth enhancement factor can be reduced from /spl sim/9.4 to /spl sim/2.0 by increasing the number of compressively strained QW´s from 2 to 8. This behavior is primarily due to an increase in the differential gain with the number of QW´s.
  • Keywords
    laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; compressively strained quantum well; differential gain; lasers; linewidth enhancement factor; strained quantum-well lasers; well number dependence; Chemical lasers; Indium phosphide; Laser modes; Laser theory; Molecular beam epitaxial growth; Quantum well devices; Quantum well lasers; Semiconductor lasers; Waveguide lasers; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.605507
  • Filename
    605507
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1355061