Room temperature 633 nm tapered diode lasers with external wavelength stabilisation

Author

Blume, Gunnar ; Fiebig, C. ; Feise, David ; Kaspari, C. ; Sahm, A. ; Paschke, Katrin ; Erbert, Gotz

Author_Institution

Ferdinand Braun Inst. fur Hochstfrequenztechnik, Berlin, Germany

Volume

3

Issue

6

fYear

2009

Firstpage

320

Lastpage

325

Abstract

Small-sized modules that have an output power P > 100 mW with a spectral width <0.25 pm at 15??C are presented. The modules, aimed at HeNe laser applications, are stabilised at 632.8 nm with reflective volume Bragg gratings at the rear side of a tapered gain medium. The gain medium consists of AlGaInP layers grown on GaAs with metal-organic vapour-phase epitaxy, which allows for an emission between 629 and 636 nm in an external cavity configuration. Free running tapered lasers from the same material achieve a room temperature continuous wave emission P > 400 mW near 633 nm and operate for more than 1000 h at 200 mW.

Keywords

Bragg gratings; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser stability; semiconductor lasers; AlGaInP-GaAs; external cavity configuration; external wavelength stabilisation; free running tapered lasers; metal-organic vapour-phase epitaxy; output power; power 200 mW; reflective volume Bragg gratings; room temperature continuous wave emission; small-sized modules; spectral width; tapered diode lasers; tapered gain medium; temperature 15 degC; temperature 293 K to 298 K; wavelength 629 nm to 636 nm;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt.2009.0042

Filename

5353237