Transient processes in AlGaN/GaN heterostructure field effect transistors

Author

Rumyantsev, S.L. ; Shur, M.S. ; Gaska, R. ; Hu, X. ; Khan, A. ; Simin, G. ; Yang, J. ; Zhang, N. ; DenBaars, S. ; Mishra, U.K.

Author_Institution

Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

36

Issue

8

fYear

2000

fDate

4/13/2000 12:00:00 AM

Firstpage

757

Lastpage

759

Abstract

The authors report on the correlation between transient behaviour and 1/f noise in GaN/AlGaN heterostructure field effect transistors (HFETs) and novel GaN/AlGaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs). When the HFETs were switched from the OFF to ON position, they exhibited non-exponential transient processes with characteristic times from 10^-7 to 10^-2 s. The transient behaviour correlated with the level of 1/f noise. MOS-HFETs fabricated on the same wafer as the HFETs did not exhibit such a transient (within the time resolution of the measurement setup, which was a few nanoseconds)

Keywords

1/f noise; III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; semiconductor device noise; transient analysis; wide band gap semiconductors; 1/f noise; GaN-AlGaN; GaN/AlGaN HFETs; MOS-HFETs; heterostructure FET; heterostructure field effect transistors; transient processes;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000573

Filename

850579