DocumentCode :
1355205
Title :
Full-Spectrum Spatial–Temporal Dynamic Thermal Analysis for Nanometer-Scale Integrated Circuits
Author :
Hassan, Zyad ; Allec, Nicholas ; Yang, Fan ; Shang, Li ; Dick, Robert P. ; Zeng, Xuan
Author_Institution :
Dept. of Electr., Comput., & Energy Eng., Univ. of Colorado, Boulder, CO, USA
Volume :
19
Issue :
12
fYear :
2011
Firstpage :
2276
Lastpage :
2289
Abstract :
This paper presents NanoHeat, a multi-resolution full-chip dynamic integrated circuit (IC) thermal analysis solution, that is accurate down to the scale of individual gates and transistors. NanoHeat unifies nanoscale and macroscale dynamic thermal physics models, for accurate characterization of heat transport from the gate and transistor level up to the chip-package level. A non-homogeneous Arnoldi-based analysis method is proposed for accurate and fast dynamic thermal analysis through a unified adaptive spatial-temporal refinement process. NanoHeat is capable of covering the complete spatial and temporal modeling spectrum of IC thermal analysis. The accuracy and efficiency of NanoHeat are evaluated, and NanoHeat has been applied to a large industry design. The importance of considering fine-grain temperature information is illustrated by using NanoHeat to estimate temperature-dependent negative-bias-temperature-instability (NBTI) effects. NanoHeat has been implemented and publicly released for free academic and personal use.
Keywords :
chip scale packaging; integrated circuit modelling; integrated circuit packaging; integrated circuit reliability; nanoelectronics; thermal analysis; IC thermal analysis; NBTI effect estimation; NanoHeat; chip-package level; fast dynamic thermal analysis; fine-grain temperature information; full-spectrum spatial-temporal dynamic thermal analysis; industry design; integrated circuit reliability; macroscale dynamic thermal physics models; multiresolution full-chip dynamic integrated circuit; nanometer-scale integrated circuits; nonhomogeneous Arnoldi-based analysis method; temperature-dependent negative-bias-temperature-instability; temporal modeling spectrum; transistor level; unified adaptive spatial-temporal refinement process; Integrated circuit modeling; Integrated circuit reliability; Phonons; Reduced order systems; Thermal analysis; Thermal factors; Integrated circuit (IC) reliability; integrated circuit (IC) thermal factors; model order reduction; thermal modeling;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2010.2076351
Filename :
5605285
Link To Document :
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