The collector function in semiconductor devices

Author

Beneking, Heinz

Author_Institution

Inst. of Semicond. Electron., Aachen, Germany

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1416

Lastpage

1427

Abstract

The functional behavior of the collector part of an amplifying three terminal electronic device is reviewed, relevant for transport and collection of carriers. The important properties are analyzed, with emphasis on III-V materials. The resulting demands are deduced, and conventional as well as unconventional solutions in the case of unipolar devices (FETs) and bipolar devices (HBTs) are presented. They include bandgap and doping profiling, heterojunction- and Schottky-collectors. Not considered are thermal stability problems and further DC phenomena, relevant for high-power devices

Keywords

doping profiles; energy gap; field effect transistors; heterojunction bipolar transistors; minority carriers; semiconductor device models; FETs; HBTs; III-V materials; Schottky collectors; amplifying three terminal electronic device; bandgap profiling; bipolar devices; carrier transport; collector function; doping profiling; heterojunction collectors; minority carriers; semiconductor devices; unipolar devices; Doping; Electron tubes; FETs; Photonic band gap; Pulse amplifiers; Radio frequency; Semiconductor devices; Semiconductor materials; Thermal stability; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.535327

Filename

535327