Title :
Three types of 2-D lateral magnetoresistive sensors with p+ -implant confinement
Author :
Sung, G.-M. ; Wei, J.-F. ; Liu, S.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2000 12:00:00 AM
Abstract :
The paper presents three types of 2-D magnetic sensors fabricated by an industrial 0.8 μm CMOS process. They are designed to measure the horizontal magnetic component Bx and the vertical magnetic component By, simultaneously. The devices with p+-implant confinement have been investigated experimentally. According to experimental results, the magnitudes of the cross-coupling noises are proportional to the device size. Both the enlarged device size and the narrowed device conductive thickness with p+-implant confinement have increased sensitivity. The measured absolute voltage sensitivity SA, the absolute current sensitivity Sl, and the supply-current-related sensitivity SRl are 0.741 V/T, 493.7 μA/T and 439.4 V/AT, respectively
Keywords :
CMOS integrated circuits; Hall effect transducers; ion implantation; magnetic field measurement; magnetic sensors; magnetoresistive devices; readout electronics; sensitivity; 0.8 micron; 2D differential lateral magnetoresistor; 2D lateral magnetoresistive sensors; 2D magnetic sensors; absolute current sensitivity; absolute voltage sensitivity; cross-coupling noise; horizontal magnetic component measurement; industrial submicron CMOS process; p+-implant confinement; readout circuit design; supply-current-related sensitivity; vertical magnetic component measurement;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20000204
