DocumentCode :
1355428
Title :
A differential photoconductive AND gate with Be-doped low-temperature-grown InGaAs-InAlAs MQW MSM-PD´s
Author :
Yoneyama, Mikio ; Shibata, Tsugumichi ; Sano, Eiichi ; Kawamura, Yuichi ; Takahashi, Ryo ; Enoki, Takatomo ; Nagatsuma, Tadao ; Yaita, Makoto
Author_Institution :
NTT Opt. Network Syst. Labs., Kanagawa, Japan
Volume :
33
Issue :
8
fYear :
1997
fDate :
8/1/1997 12:00:00 AM
Firstpage :
1308
Lastpage :
1315
Abstract :
A novel photoconductive AND gate that overcomes the problems of: 1) the long tail of photoconductive switches and 2) signal leakage via switch capacitance (signal feedthrough) is proposed. We use Be-doped low-temperature (LT)-grown InGaAs-InAlAs MQW metal-semiconductor-metal photodetectors (MSM-PD´s) to get a shorter turn-off time and propose a differential AND gate to cancel the signal feedthrough. A comparison between LT-grown MSM-PD´s and those fabricated by ion implantation shows that the LT-grown ones are ultrafast with a full width at half maximum of 5.3 ps and are suitable for low-bias operation. It is experimentally confirmed that the differential AND gate completely cancels the signal feedthrough in the picosecond region. The differential AND gate: with the LT MSM-PD´s achieves return-to-zero (RZ) 20 Gb/s AND operation
Keywords :
III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; indium compounds; ion implantation; logic gates; optical logic; photoconducting devices; photoconducting switches; photodetectors; semiconductor heterojunctions; semiconductor quantum wells; 20 Gbit/s; InGaAs-InAlAs; InGaAs-InAlAs:Be; MQW metal-semiconductor-metal photodetectors; differential AND gate; differential photoconductive AND gate; fabrication; ion implantation; low-temperature-grown multi-quantum wells; photoconductive AND gate; photoconductive switches; picosecond region; return-to-zero AND operation; signal feedthrough; signal leakage; switch capacitance; turn-off time; ultrafast photodetectors; Fiber nonlinear optics; High speed optical techniques; Laboratories; Nonlinear optics; Optical mixing; Photoconductivity; Photodetectors; Quantum well devices; Switches; Ultrafast optics;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.605552
Filename :
605552
Link To Document :
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