Photoluminescence investigation of the carrier confining properties of multiquantum barriers

Author

Morrison, A.P. ; Considine, L. ; Walsh, S. ; Cordero, N. ; Lambkin, J.D. ; O´Connor, G.M. ; Daly, E.M. ; Glynn, T.J. ; van der Poel, C.J.

Author_Institution

Technol. Characterization & Modeling Group, Nat. Microelectron. Res. Centre, Cork, Ireland

Volume

33

Issue

8

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

1338

Lastpage

1344

Abstract

A comparative luminescence study of two Ga_0.52In_0.48P-(Al_0.5Ga_0.5) _0.52In_0.48P single-quantum-well (SQW) samples with bulk and multiquantum barrier (MQB) barriers is presented. When excess carriers are only created in the quantum wells (QW´s) of the samples by resonant excitation using a dye laser, the luminescence efficiency of both samples as a function of temperature is found to be essentially identical. We find, therefore, no evidence for any enhancement in the confining potential of the MQB sample over the bulk barrier sample. From Arrhenius plots of the integrated luminescence intensity, it is found that carrier loss from the QW is dominated by a nonradiative loss mechanism with an activation energy considerably smaller than that expected from direct thermal loss of electrons and holes into the barriers. We suggest that the improved device characteristics reported for lasers containing MQB´s is due to effects other than the quantum interference of electrons

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; nonradiative transitions; photoluminescence; quantum well lasers; semiconductor quantum wells; 600 to 700 nm; Arrhenius plots; Ga_0.52In_0.48P -(Al_0.5Ga_0.5)_0.52In_0.48P; GaInP-AlGaInP; activation energy; bulk barrier sample; carrier confining properties; carrier loss; comparative luminescence study; confining potential; device characteristics; dye laser; excess carriers; integrated luminescence intensity; lasers; luminescence efficiency; multiquantum barriers; nonradiative loss mechanism; quantum interference; resonant excitation; single-quantum-well samples; Electrons; Interference; Luminescence; Microelectronics; Photoluminescence; Quantum well lasers; Semiconductor lasers; Superlattices; Temperature; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.605556

Filename

605556