• DocumentCode
    1355473
  • Title

    A quantitative comparison of the classical rate-equation model with the carrier heating model on dynamics of the quantum-well laser: the role of carrier energy relaxation, electron-hole interaction, and Auger effect

  • Author

    Wang, Jian ; Schweizer, Heinz C.

  • Author_Institution
    Phys. Inst., Stuttgart Univ., Germany
  • Volume
    33
  • Issue
    8
  • fYear
    1997
  • fDate
    8/1/1997 12:00:00 AM
  • Firstpage
    1350
  • Lastpage
    1359
  • Abstract
    In this paper, a quantitative theoretical comparison of the classical rate-equation model with the carrier heating model for large signal dynamic response of 1.5-μm InGaAs-InGaAsP single-mode quantum-well (QW) lasers Is performed. The contributions of carrier energy relaxation, electron-hole interaction, and Auger effect to the nonlinear gain are inspected in detail by a numerical comparison of the two models at room temperature (293 K) and low temperature (50 K). It can be shown that contribution of the carrier heating to the nonlinear gain coefficient is proportional to an effective carrier energy relaxation time, and the contribution of the electron-hole energy exchange time shows a nonlinear relation. Furthermore, the influence of Auger heating on the modulation dynamics is also considered and is found to be indescribable by a single phenomenological nonlinear gain coefficient. The dependence of the nonlinear gain coefficient on the laser emission wavelength of distributed feedback lasers is also demonstrated quantitatively for the first time
  • Keywords
    Auger effect; III-V semiconductors; carrier relaxation time; distributed feedback lasers; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser beams; laser feedback; laser modes; laser theory; optical hole burning; optical modulation; quantum well lasers; semiconductor device models; semiconductor heterojunctions; 1.5 mum; 294 K; 50 K; Auger effect; Auger heating; InGaAs-InGaAsP; carrier energy relaxation; carrier heating; carrier heating model; classical rate-equation model; distributed feedback lasers; effective carrier energy relaxation time; electron-hole energy exchange time; electron-hole interaction; large signal dynamic response; laser emission wavelength; low temperature; modulation dynamics; nonlinear gain; nonlinear gain coefficient; nonlinear relation; quantum-well laser; room temperature; single-mode quantum-well lasers; Distributed feedback devices; Equations; Heating; Laser feedback; Laser modes; Pump lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.605558
  • Filename
    605558