Title :
Well number, length, and temperature dependence of efficiency and loss in InGaAsP-InP compressively strained MQW ridge waveguide lasers at 1.3 μm
Author :
Prosyk, Kelvin ; Simmons, John G. ; Evans, J.D.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
fDate :
8/1/1997 12:00:00 AM
Abstract :
Experimental measurements of external differential efficiency on 0.7% compressively strained multiquantum-well (MQW) ridge waveguide lasers operating at 1.3 μm are presented. The lasers have the number of quantum wells (QW´s) varying from 5 to 14 and cavity lengths ranging from 250 to 1000 μm and were measured over a temperature range of -50°C to 90°C. A phenomenological model is introduced which shows that over a range of design and operating conditions, the behavior of the external differential quantum efficiency can be entirely explained by intervalence band absorption (IVBA) It is also shown that outside this range IVBA alone is not sufficient to describe the behavior, indicating that current leakage becomes a significant factor. Ramifications of the IVBA contribution to the external differential quantum efficiency are investigated
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical losses; quantum well lasers; ridge waveguides; waveguide lasers; -50 to 90 C; 0.7 percent; 1.3 mum; 250 to 1000 mum; InGaAsP-InP; InGaAsP-InP laser; cavity lengths; compressively strained MQW ridge waveguide lasers; current leakage; efficiency; external differential efficiency; external differential quantum efficiency; intervalence band absorption; laser design; loss; operating conditions; phenomenological model; quantum wells; ridge waveguide lasers; temperature dependence; well length; well number; Absorption; Laser modes; Numerical models; Optical materials; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature measurement; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
