Wavelength chirp and dependence of carrier temperature on current in MQW InGaAsP-InP lasers

Author

Shtengel, Gleb E. ; Kazarinov, Rudolf F. ; Belenky, Gregory L. ; Reynolds, C.L., Jr.

Author_Institution

Lucent Technol., AT&T Bell Labs., Breinigsville, PA, USA

Volume

33

Issue

8

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

1396

Lastpage

1402

Abstract

In this paper, we derive a relation between the wavelength chirp and carrier temperature in semiconductor lasers. The coefficient relating the change in carrier temperature and chirp is expressed in terms of the temperature derivative of the optical gain, and two parameters describing the variation of refractive index produced by the variation of optical gain due to change of carrier quasi-Fermi level separation or carrier temperature. We have measured these parameters for MQW InGaAsP lasers, Using this data, we estimated the rate of the temperature increase with current above threshold in these devices, which is 0.13 K/mA

Keywords

Fermi level; III-V semiconductors; chirp modulation; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser feedback; laser variables measurement; optical modulation; quantum well lasers; refractive index; semiconductor heterojunctions; 1.3 mum; InGaAsP-InP; InGaAsP-InP lasers; MQW laser; carrier quasi-Fermi level separation; carrier temperature; chirp; current; optical gain; refractive index; semiconductor lasers; temperature derivative; wavelength chirp; Chirp; Heating; Optical refraction; Optical sensors; Optical variables control; Plasma temperature; Quantum well devices; Semiconductor lasers; Spontaneous emission; Temperature dependence;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.605562

Filename

605562